MRAM (Magnetic Random Access Memory)
Among the emerging technologies that have been developed to overcome the scaling problem of current Si-based electronics, MRAM, made of magnetic thin films, seems particularly promising as it allows the development of non-volatile memory device with high operation speed and high density. For that reason, MRAM is widely investigated by major Semiconductor companies for next generation memory device.
MRAM is not only suitable as conventional memory device, but it can also be used in alternative computing system such as 'Neuromorphic computing', 'Probabilistic computing' and 'Processing in memory'. These new technologies are at the center of interest in current Semiconductor industry and research.
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Reseach topics for MRAM
1. MTJ based logic computing
2. Low energy Spin-orbit torque MRAM channel material
3. High TMR material for MTJ
- Chiral Perovskite for high TMR; in collaboration with Prof. Kim, Young-Hoon (Hanyang Univ)