Research Overview
We work on emerging nano devices (resistive, spintronic, neuromorphic, low-dimension etc.) and related materials and physics. Our target is to develop new materials and devices that can overcome the challenges we face in our current ICT. Our ultimate goal is to develop a new kind of device that can help develop new type of computing system that can overcome current von-Neumann bottleneck.
MRAM
MRAM (Magnetic random access memory) is a type of emerging non-volatile memory that utilizes the use of electron spin and magnetic materials (Fe, Co, Ni etc.) Spin is used to switch the magnetic materials that compose MRAM, and magnetization alignment within the magnetic materials stores the digital data.
We work on utilizing MRAM for novel logic circuits, develop new materials to improve the readout signal (TMR) of MRAM, lower the switching energy of MRAM etc.
RRAM
RRAM (Resistive random access memory) is a type of emerging non-volatile memory that is made of metal-insulator-metal structure. Usually oxygen vacancy or metal filaments are used for device operation. We work on developing MRAM/RRAM hybride structure using materials used in MRAM to develop RRAM.
We intend to develop 3D-RRAM type of RRAM and MRAM for future 3D memory system.