RRAM (Resistive Random Access Memory)
Among the emerging technologies that have been developed to overcome the scaling problem of current Si-based electronics, RRAM, made of simple MIM (metal-insulator-metal) structure is easy to fabricate and has simple structure to study. Resistive Random-Access Memory (RRAM) is a memory technology that stores data by changing the resistance of a metal-oxide-semiconductor structure.
Not only 2D structure, we seek to develop 3D-RRAM structure which can be applied to MRAM as 3D-MRAM architecture. Our ultimate goal is to develop 3D RRAM/MRAM hybrid architecture with MRAM/RRAM compatible material.
In RRAM, the memory cell typically consists of a Metal-Insulator-Metal (MIM) structure, where the insulating layer (often an oxide material) undergoes resistance switching. The device operates by applying a voltage to the electrodes, causing the formation or dissolution of a conductive filament within the oxide layer, enabling resistance switching between a high-resistance state (HRS) and a low-resistance state (LRS). The switching mechanism in RRAM is influenced by the type of filament formed. In Valence Change Memory (VCM), the filament is formed by the migration of oxygen vacancies, while in Electro-Chemical Metallization Memory (ECM), the filament is formed by the movement of metal ions. RRAM has potential applications in memory devices, neuromorphic computing, and data storage due to its fast switching speed, low power consumption, and scalability.
The goal of our research is to develop a new memory structure suitable for RRAM
- Applying new bilayer structure in ECM memory based on HfO2 oxide
- Exploring structures through the introduction of a 3D-RRAM structure
[1] Seung-Hwan Kim et al, “Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnuim-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits”, Applied Materials & Interfaces (2019)